bf996s vishay telefunken www.vishay.de ? faxback +1-408-970-5600 rev. 3, 20-jan-99 1 (8) document number 85010 nchannel dual gate mos-fieldeffect tetrode, depletion mode electrostatic sensitive device. observe precautions for handling. applications input- and mixer stages in uhf tuners. features integrated gate protection diodes low noise figure low feedback capacitance high cross modulation performance low input capacitance high agc-range 13 579 21 4 3 94 9279 bf996s marking: mh plastic case (sot 143) 1=source, 2=drain, 3=gate 2, 4=gate 1 g 2 g 1 d s 12623 absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test conditions type symbol value unit drain - source voltage v ds 20 v drain current i d 30 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg 65 to +150 c maximum thermal resistance t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit channel ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu r thcha 450 k/w
bf996s vishay telefunken www.vishay.de ? faxback +1-408-970-5600 rev. 3, 20-jan-99 2 (8) document number 85010 electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test conditions type symbol min typ max unit drain - source breakdown voltage i d = 10 a, v g1s = v g2s = 4 v v (br)ds 20 v gate 1 - source breakdown voltage i g1s = 10 ma, v g2s = v ds = 0 v (br)g1ss 8 14 v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 8 14 v gate 1 - source leakage current v g1s = 5 v, v g2s = v ds = 0 i g1ss 50 na gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 50 na drain current v ds = 15 v, v g1s = 0, v g2s = 4 v bf996s i dss 4 18 ma ds g1s g2s BF996SA i dss 4 10.5 ma bf996sb i dss 9.5 18 ma gate 1 - source cut-off voltage v ds = 15 v, v g2s = 4 v, i d = 20 a v g1s(off) 2.5 v gate 2 - source cut-off voltage v ds = 15 v, v g1s = 0, i d = 20 a v g2s(off) 2.0 v electrical ac characteristics v ds = 15 v, i d = 10 ma, v g2s = 4 v, f = 1 mhz , t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit forward transadmittance ? y 21s ? 15 18.5 ms gate 1 input capacitance c issg1 2.2 2.6 pf gate 2 input capacitance v g1s = 0, v g2s = 4 v c issg2 1.1 pf feedback capacitance c rss 25 35 ff output capacitance c oss 10.8 1.2 pf power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 25 db g g s = 3.3 ms, g l = 1 ms, f = 800 mhz g ps 18 db agc range v g2s = 4 to 2 v, f = 800 mhz g ps 40 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f 1.0 db g g s = 3.3 ms, g l = 1 ms, f = 800 mhz f 1.8 db
bf996s vishay telefunken www.vishay.de ? faxback +1-408-970-5600 rev. 3, 20-jan-99 3 (8) document number 85010 common source sparameters v ds , = 15 v , v g2s = 4 v , z 0 = 50 t amb = 25 c, unless otherwise specified s11 s21 s12 s22 i d /ma f/mhz log mag ang log mag ang log mag ang log mag ang db deg db deg db deg db deg 100 0.05 8.5 3.24 164.9 56.84 82.2 0.08 3.4 200 0.15 17.7 3.63 150.9 50.57 75.6 0.18 7.1 300 0.43 24.6 2.51 134.7 48.51 67.7 0.29 9.7 400 0.70 32.1 2.01 121.3 46.98 62.8 0.44 12.3 500 1.03 39.2 1.45 108.4 46.40 57.8 0.59 15.1 600 1.33 45.8 0.94 96.5 46.40 57.3 0.76 17.4 5 700 1.62 52.3 0.43 85.0 47.02 58.9 0.91 19.7 800 1.92 58.7 0.10 74.1 47.53 63.3 1.08 22.0 900 2.21 64.7 0.59 63.6 47.81 73.1 1.26 24.3 1000 2.49 70.7 1.12 53.1 48.52 83.5 1.45 26.2 1100 2.80 76.6 1.52 43.7 48.53 102.1 1.57 28.4 1200 3.07 82.5 1.93 33.6 46.95 120.4 1.75 30.5 1300 3.31 88.6 2.35 24.1 44.44 131.7 1.92 32.7 100 0.05 9.0 5.19 165.3 56.24 81.9 0.11 3.5 200 0.16 18.7 5.58 151.8 49.97 75.0 0.21 7.2 300 0.48 26.0 4.45 136.3 47.91 67.2 0.33 9.8 400 0.76 33.7 3.95 123.3 46.48 61.8 0.47 12.6 500 1.11 41.2 3.40 110.9 45.91 56.3 0.65 15.3 600 1.43 48.3 2.88 99.5 45.91 55.8 0.81 17.8 10 700 1.75 55.1 2.39 88.7 46.53 56.7 0.96 20.0 800 2.07 61.6 1.88 78.1 47.13 60.7 1.12 22.4 900 2.40 67.9 1.39 67.9 47.41 69.9 1.32 24.6 1000 2.70 74.2 0.90 57.9 48.21 80.0 1.49 26.6 1100 3.03 80.2 0.50 48.7 48.43 98.9 1.61 28.8 1200 3.32 86.4 0.13 38.9 47.04 118.2 1.79 31.0 1300 3.59 92.3 0.28 29.6 44.54 130.5 1.96 33.3 100 0.05 9.4 6.07 165.4 55.74 81.4 0.15 3.6 200 0.17 19.4 6.44 152.0 49.47 74.6 0.24 7.3 300 0.50 27.1 5.31 136.7 47.41 66.4 0.36 10.0 400 0.81 35.0 4.80 123.8 45.98 60.8 0.52 12.9 500 1.18 42.9 4.23 111.5 45.41 55.1 0.68 15.7 600 1.52 50.3 3.72 100.3 45.41 54.4 0.84 18.0 15 700 1.86 57.2 3.22 89.6 46.13 54.9 1.02 20.4 800 2.20 63.9 2.72 79.4 46.63 58.5 1.16 22.7 900 2.53 70.4 2.24 69.2 47.00 67.3 1.35 25.0 1000 2.86 76.8 1.74 59.4 47.91 76.7 1.53 27.1 1100 3.21 82.9 1.34 50.2 48.33 95.2 1.66 29.4 1200 3.50 89.0 0.95 40.8 47.04 115.3 1.84 31.6 1300 3.80 95.1 0.56 31.5 44.53 128.7 2.00 33.9
bf996s vishay telefunken www.vishay.de ? faxback +1-408-970-5600 rev. 3, 20-jan-99 4 (8) document number 85010 typical characteristics (t amb = 25 c unless otherwise specified) 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 t amb ambient temperature ( c ) 96 12159 p total power dissipation ( mw ) tot figure 1. total power dissipation vs. ambient temperature 0 4 8 12 16 20 24 28 32 0246810121416 v ds drain source voltage ( v ) 12849 i drain current ( ma ) d v g1s = 1v 1v 0 2v 0.5v v g2s =4v p tot =200mw 0.5v 1.5v figure 2. drain current vs. drain source voltage 0 2 4 6 8 10 12 14 16 18 20 22 1 0.5 0.0 0.5 1.0 1.5 v g1s gate 1 source voltage ( v ) 12851 i drain current ( ma ) d v g2s = 1v 5v 4v 0 2v 1v 3v v ds = 15v 6v 0.5v figure 3. drain current vs. gate 1 source voltage 0 2 4 6 8 10 12 14 16 18 20 22 1 0.5 0.0 0.5 1.0 1.5 v g2s gate 2 source voltage ( v ) 12852 i drain current ( ma ) d v g1s = 1v 0 2v 1v 3v v ds = 15v 5v 4v figure 4. drain current vs. gate 2 source voltage 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 0.5 0.0 0.5 1.0 1.5 i d drain current ( ma ) 12853 c gate 1 input capacitance ( pf ) issg1 v ds =15v v g2s =4v f=1mhz figure 5. gate 1 input capacitance vs. drain current 0 0.5 1.0 1.5 2.0 2.5 3.0 21012345 v g2s gate 2 source voltage ( v ) 12854 c gate 2 input capacitance ( pf ) issg2 v ds =15v v g1s =0 f=1mhz figure 6. gate 2 input capacitance vs. gate 2 source voltage
bf996s vishay telefunken www.vishay.de ? faxback +1-408-970-5600 rev. 3, 20-jan-99 5 (8) document number 85010 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 101214161820 v ds drain source voltage ( v ) 12856 c output capacitance ( pf ) oss v g2s =4v f=1mhz figure 7. output capacitance vs. drain source voltage 60 50 40 30 20 10 0 10 2.0 1.5 1.0 0.5 0.0 0.5 1.0 1.5 2.0 v g1s gate 1 source voltage ( v ) 12855 s transducer gain ( db ) 2 21 4v 0 2v 1v 3v f= 200mhz 0.2v v g2s =1v 0.8v 0.6v 0.4v figure 8. transducer gain vs. gate 1 source voltage 0 2 4 6 8 10 12 14 16 18 20 024681012141618 i d drain current ( ma ) 12850 v ds =15v f=1mhz 4v 2v 3v 1v 0.5v v g2s =0 y forward transadmittance ( ms ) 21s figure 9. forward transadmittance vs. drain current 0 2 4 6 8 10 12 14 16 18 20 012345678910 re (y 11 ) ( ms ) 12857 im ( y ) ( ms ) 11 v ds =15v v g2s =4v i d =10ma f=100...1300mhz 700mhz 1100mhz 500mhz 900mhz 300mhz f=1300mhz 100mhz figure 10. short circuit input admittance 25 20 15 10 5 0 15 10 5 0 5 10 15 20 re (y 21 ) ( ms ) 12858 im ( y ) ( ms ) 21 v ds =15v v g2s =4v f=100...1300mhz f=100mhz 1300mhz 500mhz 300mhz 1100mhz 900mhz 700mhz i d =5ma 10ma 15ma figure 11. short circuit forward transfer admittance 0 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 re (y 22 ) ( ms ) 12859 im ( y ) ( ms ) 22 v ds =15v v g2s =4v i d =10ma f=100...1300mhz f=1300mhz 900mhz 500mhz 300mhz 100mhz 700mhz 1100mhz figure 12. short circuit output admittance
bf996s vishay telefunken www.vishay.de ? faxback +1-408-970-5600 rev. 3, 20-jan-99 6 (8) document number 85010 v ds = 15 v, i d = 10 ma, v g2s = 4 v , z 0 = 50 s 11 12 968 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 1300mhz 100 figure 13. input reflection coefficient s 21 12 970 0 90 180 90 1 2 150 120 60 30 120 150 60 30 1300mhz 300 500 700 100 figure 14. forward transmission coefficient s 12 12 969 0 90 180 90 0.08 0.16 150 120 60 30 120 150 60 30 1300mhz 100 figure 15. reverse transmission coefficient s 22 12 971 j0.2 j0.5 j j2 j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 1300mhz 100 figure 16. output reflection coefficient
bf996s vishay telefunken www.vishay.de ? faxback +1-408-970-5600 rev. 3, 20-jan-99 7 (8) document number 85010 dimensions in mm 96 12240
bf996s vishay telefunken www.vishay.de ? faxback +1-408-970-5600 rev. 3, 20-jan-99 8 (8) document number 85010 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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